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Semconductor Structure with Increased Breakdown Voltage and Method for Producing the Semconductor Structure Background of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | A Semiconductor Structure comprises a buried first Semicon ductor layer of a first doping type, a Second Semiconductor layer of the first doping type on the buried Semiconductor layer, which is leSS doped than the buried first Semiconductor layer, a Semiconductor area of a Second doping type on the Second Semiconductor layer, So that a pnjunction is formed between the Semiconductor area and the Second Semicon ductor layer, and a receSS present below the Semiconductor area in the buried first Semiconductor layer, which comprises a Semiconductor material of the first doping type, which can be leSS doped than the buried first Semiconductor layer and has a larger distance to the Semiconductor area of the Second doping type on the Second Semiconductor layer, Such that the breakdown Voltage across the pn junction is higher than if the recess were not provided. Thereby, it is achieved that both a semiconductor structure with a desired breakdown Voltage as well as a further Semiconductor Structure without this receSS can be generated in the buried first Semiconductor layer with optimized HF properties. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/57/ec/a9/ee58a663ab6be6/US20040227210A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
