Loading...
Please wait, while we are loading the content...
Similar Documents
Electrically pumped hybrid evanescent Si/InGaAsP lasers.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sun, Xiankai Zadok, Avi Shearn, Michael J. Diest, Kenneth Ghaffari, Alireza Atwater, Harry A. Scherer, Axel Yariv, Amnon |
| Copyright Year | 2009 |
| Abstract | Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-mum-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15 degrees C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm2. Continuous wave laser operation was obtained up to 45 degrees C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide. |
| File Format | PDF HTM / HTML |
| DOI | 10.1364/OL.34.001345 |
| PubMed reference number | 19412267 |
| Journal | Medline |
| Volume Number | 34 |
| Issue Number | 9 |
| Alternate Webpage(s) | http://authors.library.caltech.edu/15262/1/Sun2009p4423Opt_Lett.pdf |
| Alternate Webpage(s) | http://daedalus.caltech.edu/publication/pubs/diest_opticsletters_2009.pdf |
| Alternate Webpage(s) | https://doi.org/10.1364/OL.34.001345 |
| Journal | Optics letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
