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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Elmessary, Muhammad A. Nagy, Dániel T. Aldegunde, Manuel Lindberg, Jari Dettmer, Wulf G. Peric, Djordje García-Loureiro, Antonio J. Kalna, Karol |
| Copyright Year | 2016 |
| Abstract | Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation. |
| Starting Page | 933 |
| Ending Page | 939 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/ted.2016.2519822 |
| Alternate Webpage(s) | http://wrap.warwick.ac.uk/77528/1/WRAP_07397987.pdf |
| Alternate Webpage(s) | https://cronfa.swan.ac.uk/Record/cronfa28960/Download/0028960-02082016135536.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/ted.2016.2519822 |
| Volume Number | 63 |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
