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Characterization of Ultra-Thin HfO$_2$ Gate Oxide Prepared by Using Atomic Layer Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Taeho Ahn, Jinho Oh, Jaemin Kim, Yangdo Kim, Young-Bae Choi, Duck-Kyun Jung, Jaehak |
| Copyright Year | 2003 |
| Abstract | Ultra-thin hafnium-oxide films were deposited by using atomic layer deposition. The impurity distribution and the film properties were studied in the deposition temperature range between 200 ◦C and 400 ◦C. Suppressed crystallization with effective Cl impurity reduction was obtained at medium temperature (300 ◦C), which resulted in a hafnium-oxide film with a low leakage current (2.06×10−7 A/cm at −2.0 MV/cm) and a small equivalent oxide thickness value (23.9 A) at the same time. |
| Starting Page | 272 |
| Ending Page | 275 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| Volume Number | 42 |
| Alternate Webpage(s) | http://tfeml.hanyang.ac.kr/bbs/data/achievement/1362379421/Characterization_of_Ultra_Thin_HfO2_Gate_Oxide_Prepared_Using_Atomic_Layer_Deposition.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
