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Measurement of Thermal Carrier de-Trapping in Double-Layer Organic Light-Emitting Diodes by Electric-Field-Induced Optical Second-Harmonic Generation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Taguchi, Dai Manaka, Takaaki Iwamoto, Mitsumasa |
| Copyright Year | 2014 |
| Abstract | By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we have been studying carrier transport mechanism in organic lightemitting diodes (OLEDs), and showed that excess carriers are accumulated at interfaces during EL radiation. However, we have not yet studied energetics of trapped carriers at interfaces. In this study, we directly probe holes thermally being de-trapped from double-layer interfaces of IZO/-NPD/Alq3/Al OLEDs (IZO: indiumzinc-oxide, -NPD: N,N'-di [(1-naphthyl)-N,N'-diphenyl]-(1,1'-biphenyl)4,4'-diamine, Alq3: tris(8-hydroxyquinolinato) aluminum(III)) by using the EFISHG. Results show that de-trapping of holes is thermally activated at around Td= 280 K, indicating that hole depth is 0.49 eV. We conclude that the EFISHG measurement is available for analyzing energetics of trapped carriers at interfaces in organic thin film devices. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2014.K-6-2 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2014/K-6-2/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2014.K-6-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
