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Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Samal, Sandeep Kumar Nayak, Deepak Ichihashi, Motoi Srinivasa Banna Lim, Sung Kyu |
| Copyright Year | 2016 |
| Abstract | In this paper, we conduct a comprehensive design comparison of 2D ICs, monolithic 3D ICs and TSV-based 3D ICs using a silicon-validated 14nm FinFET foundry technology and commercial quality designs. Through full-chip layouts and sign-off analysis using commercial-grade tools, the potential of monolithic 3D IC is explored and validated in terms of power, performance and area against that of TSV-based 3D ICs and 2D ICs. |
| Starting Page | 1 |
| Ending Page | 2 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/S3S.2016.7804405 |
| Alternate Webpage(s) | http://www.gtcad.gatech.edu/www/papers/07804405.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/S3S.2016.7804405 |
| Journal | 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |