NDLI: Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

Content Provider	Semantic Scholar
Author	Žďánský, Karel Černohorský, Ondřej Yatskiv, Roman
Copyright Year	2012
Abstract	High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high recti cation ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky Mott limit. The sensitivity to hydrogen of the diodes was measured in the ow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously.
Starting Page	572
Ending Page	575
Page Count	4
File Format	PDF HTM / HTML
DOI	10.12693/aphyspola.122.572
Volume Number	122
Alternate Webpage(s)	http://przyrbwn.icm.edu.pl/APP/PDF/122/a122z3p37.pdf
Alternate Webpage(s)	https://doi.org/10.12693/aphyspola.122.572
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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