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Solution-Processed Hybrid Organic-Inorganic Complementary Thin-Film Transistor Inverter
| Content Provider | Semantic Scholar |
|---|---|
| Author | Cheong, Heajeong Ogura, Shintaro Kuribara, Kazunori Yoshida, Manabu Ushijima, Hirobumi Fukuda, Nobuko Uemura, Sei |
| Copyright Year | 2015 |
| Abstract | Hybrid organic–inorganic complementary inverters composed of Dinaphtho [2,3-b:2',3'-f] thieno [3,2-b] thiophene (DNTT) and indium–gallium–zinc–oxide (IGZO) as pand nsemiconductors, respectively, were fabricated. An IGZO film, used as an n-type semiconductor, was fabricated by a solution process. It showed a field-effect mobility of 0.3 cm 2 ∙V -1 ∙s -1 . The time and temperature required for the preparation of the IGZO were 5 min and 200 °C, respectively. A hybrid complementary inverter was fabricated by combining the IGZO with a DNTT thin-film transistor. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/ssdm.2015.ps-10-3 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2015/SOP-10-3/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/ssdm.2015.ps-10-3 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
