NDLI: Model DC tranzystora GaN HEMT z uwzględnieniem parametrów fizycznych

Content Provider	Semantic Scholar
Author	Wojtasiak, Wojciech Kuchta, Dawid
Copyright Year	2015
Abstract	Commonly known method for the measurement of electron mobility and concentration in the 2-dimensional electron gas (2-DEG) of HEMT heterostructures are used to evaluate the individual stages in the technological process. Currently, there is no quantitative reference of values obtained with the use of mentioned methods directly to the electrical characteristics of the transistor. This was the main reason to apply a terminal approach in order to determine a mobility and carrier concentration in 2-DEG of GaN HEMTs heterostructures based on physical relationships and IV characteristics. (A DC Analytical Model of AlGaN/GaN HEMT including physical parameters). Słowa kluczowe: model, GaN HEMT, tranzystor, ruchliwość, koncentracja, 2-DEG, C-V.
Starting Page	207
Ending Page	210
Page Count	4
File Format	PDF HTM / HTML
DOI	10.15199/48.2015.09.54
Alternate Webpage(s)	http://pe.org.pl/articles/2015/9/54.pdf
Alternate Webpage(s)	https://doi.org/10.15199/48.2015.09.54
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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