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Vertical graphene-base hot-electron transistor.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zeng, Caifu Song, Emil B. Wang, Minsheng Lee, Sejoon Torres, Carlos Manuel Callón Tang, Jianshi Weiller, Bruce H. Wang, Kang L. |
| Copyright Year | 2013 |
| Abstract | We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of the materials and their thicknesses used for the tunneling and filtering barriers on the common-base current gain α are studied. The optimization of the SiO2 thickness and using HfO2 as the filtering barrier significantly improves the common-base current gain α by more than 2 orders of magnitude. The results demonstrate that GB-HETs have a great potential for high-frequency, high-speed, and high-density integrated circuits. |
| File Format | PDF HTM / HTML |
| DOI | 10.1021/nl304541s |
| PubMed reference number | 23668939 |
| Journal | Medline |
| Volume Number | 13 |
| Issue Number | 6 |
| Alternate Webpage(s) | http://mrsec.gatech.edu/sites/mrsec.gatech.edu/files/Vertical%20Graphene%20Base%20Hot%20Electron%20Transistor.pdf |
| Alternate Webpage(s) | http://drl.ee.ucla.edu/wp-content/uploads/2017/08/Vertical-Graphene-base-hot-electron-transistor.pdf |
| Alternate Webpage(s) | https://doi.org/10.1021/nl304541s |
| Journal | Nano letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
