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Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sawada, Yutaka Seki, Shigeyuki Uchida, Takayuki Hoshi, Yoichi Wang, Meihan Sun, Lixian |
| Copyright Year | 2015 |
| Abstract | Indium-Tin-Oxide (ITO, tin-doped In2O3) films with low resistivity (7.7x10(-5) ohm cm) and high carrier electron concentration (1.8x10(21) cm-3) was successfully prepared by spray chemical vapor deposision in air and post-deposition annealing in reducing atmosphere in our previous papers; Y. Sawada et al., Thin Solid Films, 409 (2002) 46-50 and Y. Sawada, Materials Sci. Forum, 437-438 (2003) 23-26. Doping one tin ion generated two carrier electrons at low concentration of tin. The relation between carrier electron concentration and tin concentration are discussed in the present paper to propose a nobel defect model. |
| File Format | PDF HTM / HTML |
| DOI | 10.2991/icmsa-15.2015.131 |
| Volume Number | 3 |
| Alternate Webpage(s) | https://download.atlantis-press.com/article/23152.pdf |
| Alternate Webpage(s) | https://doi.org/10.2991/icmsa-15.2015.131 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |