NDLI: eGaN ® FET Drivers and Layout Considerations EFFICIENT POWER CONVERSION DRIVING eGaN ® FETS

Content Provider	Semantic Scholar
Author	Lidow, Alex Strydom, Johan
Copyright Year	2016
Abstract	DRIVING eGaN® FETS When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most power MOSFETs, but does not suffer from as strong a negative temperature coefficient as MOSFETs. Thirdly, the “body diode” forward drop can be higher than comparable silicon MOSFETs, which requires additional attention to timing for the gate drive as compared to MOSFETs.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://epc-co.com/epc/Portals/0/epc/documents/papers/eGaN%20FET%20Drivers%20and%20Layout%20Considerations.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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