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Enhancement-mode Pseudomorphic In0.22Ga0.78As-channel MOSFETs with InAlP Native Oxide Gate Dielectric
| Content Provider | Semantic Scholar |
|---|---|
| Author | Xing, Xiu Yuan Fay, Patrick |
| Copyright Year | 2010 |
| Abstract | As an alternative to conventional III-V HEMTs and MESFETs for high-speed and wireless applications, enhancement-mode pseudomorphic In0.22Ga0.78As-channel MOSFETs with an ultra-thin InAlP native oxide gate dielectric are reported. The gate dielectric is formed by wet thermal oxidation of a 2 nm InAlP epitaxial layer, resulting in a 3.5 nm thick InAlP oxide gate dielectric. The gate oxide reduces the gate leakage below that of HFETs based on the same epitaxial structure by more than 10 5 times. A typical 0.5 μm gate length device exhibits a threshold voltage of 1.05 V, a peak extrinsic transconductance of 146 mS/mm, and a saturation drain current density of 95 mA/mm. A cutoff frequency, fT, of 34 GHz, and a maximum frequency of oscillation, fmax, of 49 GHz have also been achieved. These results suggest that RF applications could benefit from III-V MOSFETs with native oxide gate dielectric. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://csmantech.pairserver.com/Digests/2010/Papers/12.2.062.pdf |
| Alternate Webpage(s) | https://www.csmantech.org/OldSite/Digests/2010/Papers/12.2.062.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
