Loading...
Please wait, while we are loading the content...
Similar Documents
Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Smowton, Peter Michael Blood, Peter |
| Copyright Year | 1995 |
| Abstract | The temperature dependence of threshold current of (AlyGa1−y)InP/GaInP quantum well lasers (y=0.3, 0.4, and 0.5) has been investigated and used to characterize thermally activated loss mechanisms above room temperature. We show good agreement between activation energies measured by Arrhenius analysis and those expected for the loss of electrons from the well to the X‐conduction band minima in the barrier. Our analysis uses measured band gaps of the actual structures, avoiding assumptions about the alloy compositions, spontaneous emission data to subtract radiative and other direct gap processes, and recent band gap data for this alloy system. This provides convincing experimental confirmation of the loss of electrons from the indirect minima as the preferred process causing the rise in current at high temperature in these lasers. |
| Starting Page | 1265 |
| Ending Page | 1267 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.114392 |
| Volume Number | 67 |
| Alternate Webpage(s) | http://orca-mwe.cf.ac.uk/30880/1/Smowton%201995.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.114392 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
