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Symmetric Si/Si1−xGex electron resonant tunneling diodes with an anomalous temperature behavior
| Content Provider | Semantic Scholar |
|---|---|
| Author | Krstelj, Ž. Matutinović‐ Liu, Chih-Wen Xiao, X. Sturm, James C. |
| Copyright Year | 1993 |
| Abstract | We report the fabrication of symmetric, n‐type resonant tunneling diodes grown by rapid thermal chemical vapor deposition in the Si/Si1−xGex material system. Up to four resonant features were observed for both positive and negative bias. This is the first time that such highly symmetric features are reported for electron resonant tunneling in the Si/SiGe material system. A peak‐to‐valley ratio of 2 was achieved at a temperature of 4 K and resonances were observed up to 240 K. An additional peak is observed at low voltages exhibiting an anomalous temperature behavior, disappearing at temperatures below 50 K. Models involving phonon absorption or emitter quantization are proposed to explain this behavior. |
| Starting Page | 603 |
| Ending Page | 605 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.108869 |
| Volume Number | 62 |
| Alternate Webpage(s) | http://www.princeton.edu/sturm/publications/journal-articles/JP.37.APL.1993.pdf |
| Alternate Webpage(s) | https://scholar.princeton.edu/sites/default/files/sturm/files/jp.37.apl_.1993.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.108869 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
