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Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kadow, C. Jackson, Andrew D. Gossard, Arthur. C. Matsuura, Shuji Blake, Geoffrey A. |
| Copyright Year | 2000 |
| Abstract | We report photomixer devices fabricated on a material consisting of self-assembled ErAs islands in GaAs, which is grown by molecular beam epitaxy. The devices perform comparably and provide an alternative to those made from low-temperature-grown GaAs. The photomixer’s frequency response demonstrates that the material is a photoconductor with subpicosecond response time, in agreement with time-resolved differential reflectance measurements. The material also provides the other needed properties such as high photocarrier mobility and high breakdown field, which exceeds 2 310 V/cm. The maximum output power before device failure at frequencies of 1 THz was of order 0.1 mW. This material has the potential to allow engineering of key photomixer properties such as the response time and dark resistance. © 2000 American Institute of Physics. @S0003-6951 ~00!01924-0# |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://authors.library.caltech.edu/2148/1/KADapl00b.pdf |
| Alternate Webpage(s) | http://web.gps.caltech.edu/~gab/publications/gabpapers/gabpapers_101.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Disintegration (morphologic abnormality) Frequency response Heterodyne Molecular beam epitaxy Response time (technology) Terahertz gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
