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MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kuo, Hao-Chung Chang, Yuwen Lin, Chung-Hsiang Lu, Tien-Chang Wang, S. C. |
| Copyright Year | 2004 |
| Abstract | Abstract We present in this paper the metalorganic chemical vapor deposition growth and characterization of high-performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP/InGaP MQWs growth condition was optimized using photoluminescence. These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high-speed modulation bandwidth up to 12.5 Gbit/s from 25°C to 85°C. |
| Starting Page | 355 |
| Ending Page | 358 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.jcrysgro.2003.11.027 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/27130/1/000188500000030.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.jcrysgro.2003.11.027 |
| Volume Number | 261 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
