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Pattern partitioning for enhanced proximity-effect corrections in electron-beam lithography
| Content Provider | Semantic Scholar |
|---|---|
| Author | Parikh, M. Schreiber, Donald E. |
| Copyright Year | 1980 |
| Abstract | This paper presents new algorithms for judicious partitioning (or subdivision) of arbitrary lithographic patterns in order to achieve increased quality of proximity-effect correction as well as increased efficiency in the computation of such corrections. Experimental results verifying the correctness of such algorithms are also presented. |
| Starting Page | 530 |
| Ending Page | 536 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1147/rd.245.0530 |
| Volume Number | 24 |
| Alternate Webpage(s) | http://www.research.ibm.com/journal/rd/245/ibmrd2405B.pdf |
| Alternate Webpage(s) | https://doi.org/10.1147/rd.245.0530 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |