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Nanocrystalline Ga-doped ZnO thin films for inverted polymer solar cells
| Content Provider | Semantic Scholar |
|---|---|
| Author | Thambidurai, Mariyappan Kim, Jun Young Song, Jiyun Ko, Young-Jun Muthukumarasamy, Natarajan Velauthapillai, Dhayalan Lee, Changhee |
| Copyright Year | 2014 |
| Abstract | Abstract Nanocrystalline ZnO and Ga-doped ZnO thin films have been prepared by sol–gel spin coating technique. X-ray diffraction results indicated that the grain size of Ga-doped ZnO is smaller than that of ZnO. The EDAX analysis confirmed that Zn, O and Ga elements are present in the samples. HRTEM image shows the formation of ZnO and Ga-doped ZnO nanocrystalline thin films with an average grain size of 22.5 and 12.5 nm. Inverted polymer solar cell containing Ga-doped ZnO as an electron transport layer with device structure ITO/Ga-doped ZnO/poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C71-butyric acid methyl ester (PC71BM)/MoO3/Al has been fabricated. The power conversion efficiency of inverted polymer solar cell with Ga-doped ZnO is 3.25%, which is higher than that of ZnO (1.96%). |
| Starting Page | 95 |
| Ending Page | 101 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.solener.2013.12.009 |
| Volume Number | 106 |
| Alternate Webpage(s) | http://isiarticles.com/bundles/Article/pre/pdf/54234.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.solener.2013.12.009 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
