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ACOUSTIC INVESTIGATION OF INTERFACE STATES OF MOS STRUCTURES WITH ULTRATHIN SiO2 LAYERS
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hockicko, Peter Sidor, Peter Bury, Peter J. Jamnick, Igor Bellan, Ivan |
| Copyright Year | 2009 |
| Abstract | The interfaces of MOS (metal‐oxide‐semiconductor) s tructures with ultrathin silicon dioxide (SiO 2) layers formed on Si substrate with nitric acid have been investigated us ing both acoustic deep-level transient spectroscopy (A-DLTS) and U ac 0 (VG) dependences to characterize the interface states. T he methods are based on the acoustoelectric respons e signal (ARS) observed on the interface when hf longitudinal wave propagates th rough the structures. The ARS is extremely sensitiv e to external conditions and reflects any changes in the charge distribution con nected also with charged traps. The MOS structures we re investigated using acoustic techniques to find the interface states an d their distribution after post-oxidation annealing (POA) and/or post-metallization annealing (PMA) treatment on the interface-state oc currence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were obs erved in the investigated structures. The activation energies and some other parameters of traps at the insulator ‐ semiconducto r interface were determined. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://hockicko.uniza.sk/Publikacie/09_kosice.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
