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Code for the 3D Simulation of Nanoscale Semiconductor Devices, Including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fiori, Gianluca Iannaccone, Giuseppe |
| Copyright Year | 2004 |
| Abstract | We present a three-dimensional device simulator, suitable for the study of a wide range of nanoscale devices, in which quantum confinement and carrier transport are taken into account. In particular, depending on the confinement, the 1D, 2D or 3D Schrödinger equation with density functional theory in the local density approximation is coupled with the Poisson equation in the three-dimensional domain. Continuity equation in the ballistic and in the drift-diffusion regime are also solved assuming separation of the subbands. |
| Starting Page | 63 |
| Ending Page | 66 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10825-005-7108-7 |
| Alternate Webpage(s) | http://www.gianlucafiori.org/articles/joce3.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s10825-005-7108-7 |
| Volume Number | 4 |
| Journal | 2004 Abstracts 10th International Workshop on Computational Electronics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
