X-Ray Reflectivity as a Metrology to Characterize Pore Size Distributions in Low-K Dielectric Films

Content Provider	Semantic Scholar
Author	Lee, Virgil J. Soles, Christopher L. Liu, Da-Wei Bauer, Barry J. Wu, Wen-Li
Copyright Year	2002
Abstract	INTRODCTION Increased miniaturization of the integrated chip has largely been responsible for the rapid and continued advances in semiconductor device performance, driving the industry’s growth over the past decade. By the year 2003, the minimum feature size in a typical device will drop below the 100 nm level. At these dimensions, interlayers with extremely low dielectric constants (K) are imperative to reduce cross talk and increase device speed. Solutions exist for dielectrics with K ≈ 2.7, primarily through organosilsesquioxane (SSQ) resins, but to decrease K further requires pore generating additives or porogens. An organic porogen will phase separate from the spin-on resin during application and decomposes at elevated temperatures, thereby inducing large-scale porosity. However, in sub-100 nm films the generation of such porosity requires exacting control. The first step to achieve this understanding, and the focus of this presentation, is to develop high-resolution metrologies that characterize the pores (both porosity and size distribution) in sub-100 nm films. This is crucial to help the materials and process engineers to rationally design the viable and effective lowK dielectric solutions.
File Format	PDF HTM / HTML
Volume Number	87
Alternate Webpage(s)	https://ws680.nist.gov/publication/get_pdf.cfm?pub_id=852038
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article