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The Dry Etching Properties on TiN Thin Film Using an N 2 /BCl 3 /Ar Inductively Coupled Plasma
| Content Provider | Semantic Scholar |
|---|---|
| Author | Woo, Jong-Chang Joo, Young-Hee Park, Jung Soo Kim, Chang Il |
| Copyright Year | 2011 |
| Abstract | In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a /Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power |
| Starting Page | 144 |
| Ending Page | 147 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.4313/TEEM.2011.12.4.144 |
| Volume Number | 12 |
| Alternate Webpage(s) | http://ocean.kisti.re.kr/downfile/volume/kieeme/E1TEAO/2011/v12n4/E1TEAO_2011_v12n4_144.pdf |
| Alternate Webpage(s) | https://doi.org/10.4313/TEEM.2011.12.4.144 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |