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A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Rudan, Massimo |
| Copyright Year | 2004 |
| Abstract | A method for directly measuring the inverse screening length in semiconductors in terms of ionized-impurity concentration and lattice temperature is demonstrated, based on a first-principle calculation of the effect of ionized-impurity scattering. No fitting parameters are involved in the derivation, which covers a wide range of doping concentrations and intrinsically complies with the Mathiessen rule. A new class of integrals is introduced in the calculation. The results are compared with the standard derivation of the inverse screening length from the perturbative solution of the Poisson equation. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://in4.iue.tuwien.ac.at/pdfs/sispad2004/pdfs/082_rudan_perroni.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Abnormal degeneration DICOM Derivation Doping (semiconductor) Doping in Sports Ionized impurity scattering Perturbation theory (quantum mechanics) Semiconductor Semiconductors |
| Content Type | Text |
| Resource Type | Article |