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Selective Reading of Memory with Improved Accuracy Cross Reference to Related Application
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | (72) Inventors: Wayne Kinney, Emmett, ID (US); (57) ABSTRACT Gurtej S. Sandhu, Boise, ID (US) (21) Appl. No.: 14/681,471 This disclosure relates to selectively performing a read with increased accuracy, Such as a self-reference read, from a (22) Filed: Apr. 8, 2015 memory. In one aspect, data is read from memory cells. Such as magnetoresistive random access memory (MRAM) cells, Related U.S. Application Data of a memory array. In response to detecting a condition asso (62) Division of application No. 13/804,598, filed on Mar. ciated with reading from the memory cells, a self-reference 14, 2013, now Pat. No. 9,025.364. read can be performed from at least one of the memory cells. s s sw1 a-s For instance, the condition can indicate that data read from the Publication Classification memory cells is uncorrectable via decoding of error correc tion codes (ECC). Selectively performing self-reference (51) Int. Cl. reads can reduce power consumption and/or latency associ G06F II/07 (2006.01) ated with reading from the memory compared to always GIC II/I6 (2006.01) performing self-reference reads. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/31/96/c4/80bd93305f5bfa/US20150212871A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Patent |
