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Improved performance and reliability of N2O-grown oxynitride on 6H-SiC
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chan, C.l. Li, Boan Cheng, Y. C. |
| Copyright Year | 2000 |
| Abstract | This letter reports, for the first time, N/sub 2/O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the N/sub 2/O-grown technique leads to not only greatly improved SiC/SiO/sub 2/ interface and oxide qualities, but also considerably enhanced device reliabilities as compared to N/sub 2/O-nitrided and conventional thermally oxidized devices. These improvements are especially obvious for p-type SiC MOS devices, indicating that N/sub 2/O oxidation could be a promising technique for fabricating enhancement-type n-channel SiC MOSFETs. |
| Starting Page | 298 |
| Ending Page | 300 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/55.843156 |
| Volume Number | 21 |
| Alternate Webpage(s) | http://hub.hku.hk/bitstream/10722/44751/1/121768.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/55.843156 |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
