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Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon
| Content Provider | Semantic Scholar |
|---|---|
| Author | Min, Byoung-Chul Lodder, J. Cock Jansen, Ron Motohashi, Kazuki |
| Copyright Year | 2006 |
| Abstract | The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7 eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration ( ∼ 1015 cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼ 102 Ω m2. While the contact resistance is improved to ∼ 10−2 Ω m2 using Si with a high doping concentration ( ∼ 5×1019 cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon |
| Starting Page | 1 |
| Ending Page | 3 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2176317 |
| Volume Number | 99 |
| Alternate Webpage(s) | http://eprints.eemcs.utwente.nl/5233/01/Min_10_1063.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2176317 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
