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Improvement of interfacial properties with interfacial layer in La2O3/Ge structure
| Content Provider | Semantic Scholar |
|---|---|
| Author | Song, Joon-Young Kakushima, Kuniyuki Ahmet, Parhat Tsutsui, Kazuo Sugii, Nobuyuki Hattori, Toshiyuki Iwai, Hiroshi |
| Copyright Year | 2007 |
| Abstract | The electrical characteristics and interfacial properties of La"2O"3/Ge structures under various post-deposition annealing (PDA) conditions are studied. We found that the interfacial Ge oxide layer reduced the D"i"t, while redundant growth of the oxide led to increment of CET. In order to satisfy small CET and low D"i"t, appropriate interfacial layer (IL) thickness is assumed to be 1.0-1.5 nm. On the other hand, Ge sub-oxide in the IL caused to increase hysteresis. Instead, by introducing the Ge chemical oxide, an interfacial La-germanate layer formed with PDA at 500 ^oC in N"2, which could reduced both the hysteresis and D"i"t. |
| Starting Page | 2336 |
| Ending Page | 2339 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.mee.2007.04.107 |
| Volume Number | 84 |
| Alternate Webpage(s) | http://www.iwailab.ep.titech.ac.jp/pdf/07song_INFOS.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.mee.2007.04.107 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
