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Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhao, Larry Chen, H-Y Jiang, Zhifeng Yu, Suzhuang Wong, H.-S. Philip Nishi, Yusuke |
| Copyright Year | 2014 |
| Abstract | Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process. |
| File Format | PDF HTM / HTML |
| DOI | 10.1039/c4nr00500g |
| Alternate Webpage(s) | http://pubs.rsc.org/EN/content/articlepdf/2014/nr/c4nr00500g |
| Alternate Webpage(s) | http://cpanel-199-19.nctu.edu.tw/~thhou/publication/2014_Nanoscale_6_5698.pdf |
| Alternate Webpage(s) | https://pubs.rsc.org/en/content/articlepdf/2014/nr/c4nr00500g |
| Alternate Webpage(s) | http://www.rsc.org/suppdata/nr/c4/c4nr00500g/c4nr00500g1.pdf |
| Alternate Webpage(s) | http://pubs.rsc.org/en/content/getauthorversionpdf/C4NR00500G |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/24647/1/000336883000022.pdf |
| PubMed reference number | 24769626 |
| Alternate Webpage(s) | https://doi.org/10.1039/c4nr00500g |
| Journal | Medline |
| Volume Number | 6 |
| Issue Number | 11 |
| Journal | Nanoscale |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
