Loading...
Please wait, while we are loading the content...
Similar Documents
Influence of Substrate Bias Voltage on the Properties of Cu Thin Films by Sputter Type Ion Beam Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lim, Jae-Won Ishikawa, Yukio Miyake, Kiyoshi Yamashita, Mutsuo Isshiki, Minoru |
| Copyright Year | 2002 |
| Abstract | Cu thin films have been deposited on Si (100) substrate by using a non-mass-separated ion beam deposition (IBD) system. The effect of the substrate bias voltage on the properties of the deposited films was investigated using X-ray diffraction, resistivity measurement and field emission scanning electron microscopy. In the case of Cu thin films deposited without bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Cu films was very high. By increasing the bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of Cu films decreased remarkably and at a bias voltage of −50 V, reaching a minimum value of 18 ± 1 n m, which is close to that of the bulk phase (16.7 n m.) |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.jstage.jst.go.jp/article/matertrans/43/6/43_6_1403/_pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Biasing Chemical vapor deposition Computed Tomography Scanning Systems Continuous Phase Copper Copper measurement Field electron emission Full Width at Half Maximum International System of Units Ion beam deposition Ions Mathematical morphology Negative feedback Radio frequency Scanning Electron Microscopy Very-large-scale integration voltage |
| Content Type | Text |
| Resource Type | Article |
