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Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current
| Content Provider | Semantic Scholar |
|---|---|
| Author | Teherani, James T. Chern, Winston Antoniadis, Dimitri A. Hoyt, Judy L. |
| Copyright Year | 2014 |
| Abstract | Ultra-thin HfO2 MOS capacitors on strained-Ge (s-Ge) have been fabricated with an extracted effective oxide thickness (EOT) of 4.9 Å and leakage current less than 0.2 A/cm 2 at |VG| < 0.5 V. The CV measurements show little hysteresis and areal capacitance scaling for 50×50 to 200×200 μm 2 devices. A high series resistance is observed, likely due to a 500 meV valence band offset between the s-Ge and relaxed, p-type Si0.55Ge0.45 virtual substrate. The capacitance results suggest an extremely-scaled, high quality dielectric on s-Ge promising for deeply scaled CMOS. |
| Starting Page | 267 |
| Ending Page | 271 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1149/06406.0267ecst |
| Volume Number | 64 |
| Alternate Webpage(s) | http://teherani.ee.columbia.edu/uploads/2/3/7/2/23722259/teherani_et_al._-_2014_-_ultra-thin_high_quality_hfo2_on_strained-ge_mos_c.pdf |
| Alternate Webpage(s) | https://doi.org/10.1149/06406.0267ecst |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
