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Wafer-scale modeling of pattern effect in oxide chemical mechanical polishing
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ouma, Dennis O. Stine, B. Divecha, Rajesh Boning, D. Chung, James E. Shinn, Gregory B. Ali, Iqbal M. Aris Clark, John |
| Copyright Year | 1997 |
| Abstract | Dielectric film thickness variation arising from layout pattern dependency remains a major concern in oxide CMP. The severity of the pattern density effect is a function of the die location on the wafer, thus a combined wafer/die pattern dependent polishing model is required to fully assess the effectiveness of the process for a given planarization requirement. In this work, a two stage modeling methodology which accounts for both wafer-scale variation and within-die pattern dependencies, as well as their interaction, is developed. The effectiveness of the methodology is demonstrated over a range of polishing process conditions and consumable choices. We find that the integrated wafer/die CMP model accurately predicts the resulting increase or decrease in die-level pattern dependencies as a function of die position on the wafer. |
| File Format | PDF HTM / HTML |
| DOI | 10.1117/12.284597 |
| Volume Number | 3212 |
| Alternate Webpage(s) | http://www-mtl.mit.edu/researchgroups/Metrology/PAPERS/SPIE97.pdf |
| Alternate Webpage(s) | https://doi.org/10.1117/12.284597 |
| Journal | Advanced Lithography |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
