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Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid
| Content Provider | Semantic Scholar |
|---|---|
| Author | Mefoued, A. Fathi, Mohammadhossein Bhatt, Jatin G. Messaoud, A. Palahouane, Baya Benrekaa, Nasser |
| Copyright Year | 2011 |
| Abstract | In this study, we have improved electrical characteristics such as the efficiency (η) and the fill factor (FF) of finished multicrystalline silicon (mc-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These mc-Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on p-type mc-Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved η from 5·4 to 7·7% and FF from 50·4 to 70·8%, this means a relative increase of up to 40% from the initial values of η and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done. |
| Starting Page | 1689 |
| Ending Page | 1692 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s12034-011-0378-8 |
| Volume Number | 34 |
| Alternate Webpage(s) | https://www.ias.ac.in/article/fulltext/boms/034/07/1689-1692 |
| Alternate Webpage(s) | https://doi.org/10.1007/s12034-011-0378-8 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
