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Projected Performance of an InxGa1-xAs Quantum Dot Intermediate Band Solar Cell
| Content Provider | Semantic Scholar |
|---|---|
| Author | Amin, Sayeda Anika Hasan, Tanvir |
| Copyright Year | 2017 |
| Abstract | Quantum Dot Intermediate Band Solar Cell (QDIBSC) is one of the emerging technologies in the solar photovoltaic arena, which has immense potential to be demonstrated as a high efficiency device. For a QDIBSC to surpass the efficiency of a single junction cell, optimization of design is required. In this work, a QDIBSC model based on In0.53Ga0.47As quantum dots has been designed and evaluated with respect to dot size and spacing. The impact of carrier lifetime on short-circuit current and open-circuit voltage is studied. The conversion efficiency has been enhanced from 27.1% to 32.62% as compared to a conventional single junction cell. |
| Starting Page | 47 |
| Ending Page | 52 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Volume Number | 16 |
| Alternate Webpage(s) | http://ajse.aiub.edu/index.php/ajse/article/download/31/26 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |