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A Comparison of Silicon Germanium Oxide Growth A Comparison of Silicon Germanium Oxide Growth and the Deal-Grove Model
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gilbank, Alexander L. Anthony, Rebecca J. Knights, A. |
| Copyright Year | 2017 |
| Abstract | Silicon germanium is an area of interest for researchers in silicon photonics, as the addition of germanium can alter the bandgap of silicon, leading to the possibility of light detection or production in silicon. The oxidation of silicon is well described by the Deal-Grove model, but the oxidation of SiGe is more difficult to predict due to a variety of factors that affect oxide growth. This study attempts to give a comparison between SiGe oxide growth and the Deal-Grove model for better understanding of which rate is dominating at different times and oxide thicknesses. The data collected in this study was collected for the purpose of studying the germanium profile in the SiGe after oxidation, but for this study the oxide thicknesses will be investigated. Due to large uncertainties and an insufficient amount of data points to draw definite conclusions, the main purpose of this study will be to act as a precursor to a more in depth study, and the areas which need improvements will be looked at and improved for the next study. The results found in this study support the expectation that the SiGe growth is more rapid than pure silicon, and finds that the growth rate levels off as the oxide becomes thicker in a possibly parabolic manner, similar to the Deal-Grove model. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://journals.mcmaster.ca/mjep/article/download/1630/1232 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
