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Valence Band Anticrossing in GaBi$_{x}$As$_{1-x}$
| Content Provider | Semantic Scholar |
|---|---|
| Author | Alberi, Kirstin Dubon, Oscar D. Walukiewicz, Wladek Bertulis, Klemensas Krotkus, Arunas |
| Copyright Year | 2007 |
| Abstract | Submitted for the MAR07 Meeting of The American Physical Society Valence Band Anticrossing in GaBixAs1−x KIRSTIN ALBERI, O.D. DUBON, U.C. Berkeley, Berkeley CA, 94720,; Berkeley Lab, Berkeley CA, 94720, W. WALUKIEWICZ, K.M. YU, Berkeley Lab, Berkeley CA, 94720, K. BERTULIS, A. KROTKUS, Semiconductor Physics Institute, A. Gostauto 11, Vilnius LT 01108, Lithuania — Recently, significant attention has been devoted to exploring the large bandgap bowing and spin-orbit splitting in GaBixAs1−x. alloys. We attribute the origins of these effects to a restructuring of the alloy valence band induced by an anticrossing interaction between the delocalized GaAs p-like states and the resonant localized Bi p-like states. Hybridization of like-symmetry states leads to the splitting of the heavy hole, light hole and spin-orbit split-off bands into sets of E+ and E− subbands. The splitting is confirmed experimentally by photomodulated reflectance spectroscopy in alloys with Bi concentrations up to x = 0.084. The bandgap bowing is a direct consequence of the strong upward shift of the uppermost heavy and light hole E+ bands with increasing Bi concentration, while the much slower ascent of the spin-orbit split-off E+ band produces the large rise in the spin-orbit splitting energy. Kirstin Alberi U.C Berkeley Date submitted: 20 Nov 2006 Electronic form version 1.4 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://absimage.aps.org/image/MAR07/MWS_MAR07-2006-005371.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
