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Copper nitride thin films prepared by radio-frequency reactive sputtering
| Content Provider | Semantic Scholar |
|---|---|
| Author | Maruyama, Toshiro Morishita, Tomonori |
| Copyright Year | 1995 |
| Abstract | Copper nitride thin films were obtained by the reactive sputtering method. A metallic copper target was sputtered in nitrogen gas with radio‐frequency (rf) magnetron sputtering equipment. Highly [100]‐oriented polycrystalline films of the cubic anti‐ReO3 structure were obtained. Films with a lattice constant above 3.868 A were conductors, while films with a lattice constant below 3.868 A were insulators. The resistivity of conducting films was 0.5–3×10−2 Ω cm. The insulating films showed an optical energy gap of 1.3 eV, while the conducting films showed a smaller value which decreased with decreasing resistivity. |
| Starting Page | 4104 |
| Ending Page | 4107 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.359868 |
| Alternate Webpage(s) | https://repository.kulib.kyoto-u.ac.jp/dspace/bitstream/2433/43537/1/JApplPhys_78_4104.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.359868 |
| Volume Number | 78 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
