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ENERGY TRANSFER MECHANISMS AND EXCITED STATE DYNAMICS OF Yb 3 + , Tm 3 + AND Ηο 3 + DOPED Gd 3 Ga 5 O 12 SINGLE CRYSTALS
| Content Provider | Semantic Scholar |
|---|---|
| Author | Pédrini, Ch. |
| Copyright Year | 2013 |
| Abstract | The eye-safe 2 μm laser emission is usually obtained from the 5Ι7 —> I8 ransition of Ηo3+ ions imbedded in crystals or glasses. The fluorescence of holmium is usually sensitized by other ions like Cr 3+, Er3+ and Tm3+ [1-4]. The two former ones allow efficient flash lamp pumping while the latter is well adapted for laser diode pumping at around 800 nm. The Ho sensitization by means of Yb 3+ ions is also attractive because of the possibility of laser diode pumping between 920 and 975 nm where powerful laser diodes are now available and because Yb 3+ ions have only one excited state. with no possibility of excited state absorption. We have shown in a previous work [5, 6] that efficient Tm—> Ho energy transfers occur in Gd3Ga5O12(GGG) and in the present paper we study energy transfers Yb—> Tm and Yb—> Ηo in GGG which lead to an enhancement of the Ho infrared fluorescence. The counterpart of the presence of sensitizers is that they can introduce the same kind of energy losses. We have analyzed previously in detail the Ho—> Tm back-transfer which can be an important source of losses when the Tm concentration increases [7] and this process is shortly presented here. Another usual source of losses is the up-conversion processes which are identifled in this work, occurring from the Yb and Ho or Tm infrared levels towards the Tm and Ho visible levels. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://przyrbwn.icm.edu.pl/APP/PDF/84/a084z5p14.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
