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Effect of annealing temperature on amorphous indium zinc oxide thin films prepared by a sol-gel spin-coating method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Sang-Hyun Lee, Seung-Yup Park, Byung-Ok |
| Copyright Year | 2012 |
| Abstract | Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [] and indium acetate [In] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to , the thin film crystallizes into polycrystalline (ZnO). The lowest electrical resistivity was obtained at an annealing temperature of as . Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes. |
| Starting Page | 15 |
| Ending Page | 18 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.6111/JKCGCT.2012.22.1.015 |
| Volume Number | 22 |
| Alternate Webpage(s) | http://ocean.kisti.re.kr/downfile/volume/kacg/GJSJBE/2012/v22n1/GJSJBE_2012_v22n1_15.pdf |
| Alternate Webpage(s) | https://doi.org/10.6111/JKCGCT.2012.22.1.015 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |