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Properties of ion-implanted junctions in mercury—cadmium—telluride
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kolodny, Anatole Kidron, I. |
| Copyright Year | 1980 |
| Abstract | The formation of n-p junctions by ion-implantation in Hg0.71Cd0.29Te is shown to be a result of implantation damage. n-p photodiodes have been made by implantation of Ar, B, Al, and P in a p-type substrate with acceptor concentration of 4 × $10^{16}cm^{-3}$. The implanted n-type layer is characterized by sheet electron concentration of $10^{14}$to $10^{15}cm^{-2}$and electron mobility higher than $10^{3}cm^{2}$. $V^{-1}$. $s^{-1}$, for ion doses in the range $10^{13}$-5 × $10^{14}cm^{-2}$. The photodiodes have a spectral cutoff of 5.2 µm, quantum efficiency higher than 80 percent, and differential resistance by area product above 2000 Ω . $cm^{2}$at 77 K. The temperature dependence of the differential resistance is discussed. The junction capacitance dependence on reverse voltage fits a linearly graded junction model. Reverse current characteristics at 77 K have been investigated using gate-controlled diodes. The results suggest that reverse breakdown is dominated by interband tunneling in field-induced junctions at the surface, for both polarities of surface potential. |
| Starting Page | 37 |
| Ending Page | 43 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/T-ED.1980.19816 |
| Volume Number | 27 |
| Alternate Webpage(s) | http://webee.technion.ac.il/people/kolodny/ftp/01480609ion%20implanted%20junctions.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/T-ED.1980.19816 |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
