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Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Herzog, William David Goldberg, Bennett B. Unlu, M. Selim Singh, Ranbir Dabkowski, Ferdynand P. |
| Copyright Year | 1998 |
| Abstract | The authors report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy. The threshold for bulk stimulated emission was found to be 3.4 MW/cm/sup 2/ with an emission linewidth of 1.2 nm. |
| Starting Page | 1970 |
| Ending Page | 1971 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1049/el:19981382 |
| Volume Number | 34 |
| Alternate Webpage(s) | http://ultra.bu.edu/Papers/elec_lett_98.pdf |
| Alternate Webpage(s) | https://doi.org/10.1049/el%3A19981382 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |