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Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
| Content Provider | Semantic Scholar |
|---|---|
| Author | Laukkanen, Pekka Punkkinen, Marko Patrick John Lang, Jeffrey H. Tuominen, Marjukka Kuz’min, Michael D. Tuominen, Vilma Dahl, Johnny Adell, Johan Sadowski, Janusz Kanski, Janusz Polojärvi, Ville Pakarinen, J. Kokko, Kalevi Guina, Mircea Pessa, M. Vayrynen, I. Juhani |
| Copyright Year | 2011 |
| Abstract | Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. |
| Starting Page | 231908 |
| Ending Page | 231908 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3596702 |
| Volume Number | 98 |
| Alternate Webpage(s) | http://publications.lib.chalmers.se/records/fulltext/143126/local_143126.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3596702 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |