Surface transfer doping: F4-TCNQ on 2-methylpropene chemisorbed Si(100)

Content Provider	Semantic Scholar
Author	Mukai, Kozo Yoshimoto, Shinya Yoshinobu, Jun
Copyright Year	2012
Abstract	Introduction We investigated the adsorption states of F4-TCNQ on the 2-methlpropene (= 2MP) chemisorbed Si(100) surface using high-resolution X-ray photoelectron spectroscopy (HR-XPS) and X-ray absorption spectroscopy (XAS) as well as He-I ultraviolet photoelectron spectroscopy (UPS). Since the valence band maximum of the 2MP saturated Si(100) surface is located at 4.62 eV below the vacuum level and the electron affinity of F4-TCNQ is 5.24 eV, a spontaneous charge transfer from the substrate to F4TCNQ is expected. With increasing the coverage of F4TCNQ, the workfunction change was monotonically increased and saturated at ~1.5 eV. At sub-monolayer coverage of F4-TCNQ on the 2MP saturated Si(100) surface, we found that an occupied LUMO peak at 1.5 eV and a relaxed HOMO peak at 2.7 eV below EF by UPS [1]. The UPS results indicate that a charge transfer occurs and F4-TCNQ becomes an anion-like state. We have obtained more detailed information about the electronic states of F4-TCNQ and the chemically modified Si substrate using HR-XPS and XAS at Photon Factory BL13A.
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