NDLI: Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

Content Provider	Semantic Scholar
Author	Hackley, Justin C. Demaree, John Derek Gougousi, Theodosia
Copyright Year	2008
Abstract	HfO2 films have been deposited by using a tetrakis(dimethylamino)hafnium/H2O atomic layer deposition (ALD) process on GaAs. X-ray photoelectron spectroscopy measurements show that the HF and NH4OH predeposition surface treatment results in efficient removal of the Ga and As native oxides. No interface oxidation is detected after 15cycles of HfO2 ALD implying effective passivation of the GaAs surface. Spectroscopic ellipsometry confirms linear growth at 1.0A∕cycle on both starting surfaces, while Rutherford backscattering spectrometry indicates steady-state coverage after about 10 ALD cycles. For films grown on native oxide GaAs, complete removal of the As oxide is observed after 20 ALD cycles.
Starting Page	162902
Ending Page	162902
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.2908223
Volume Number	92
Alternate Webpage(s)	https://userpages.umbc.edu/~gougousi/papers/GaAs_APL.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.2908223
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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