Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Content Provider	Semantic Scholar
Author	Ryu, Seong-Wan Han, Jin-Woo Kim, Chung-Jin Kim, Sungho Choi, Y.
Copyright Year	2009
Abstract	Abstract This paper describes a unified memory (URAM) that utilizes a nanocrystal SOI MOSFET for multi-functional applications of both nonvolatile memory (NVM) and capacitorless 1T-DRAM. By using a discrete storage node (Ag nanocrystal) as the floating gate of the NVM, high defect immunity and 2-bit/cell operation were achieved. The embedded nanocrystal NVM also showed 1T-DRAM operation (program/erase time = 100 ns) characteristics, which were realized by storing holes in the floating body of the SOI MOSFET, without requiring an external capacitor. Three-bit/cell operation was accomplished for different applications – 2-bits for nonvolatility and 1-bit for fast operation.
Starting Page	389
Ending Page	391
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1016/j.sse.2009.01.015
Volume Number	53
Alternate Webpage(s)	http://nobent.kaist.ac.kr/paper/2009/FJ_Seong-Wan%20Ryu_URAM%20nanocrystal%20floating%20gate.pdf
Alternate Webpage(s)	https://doi.org/10.1016/j.sse.2009.01.015
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article