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Flicker noise in degenerately doped Si single crystals near the metal-insulator transition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Raychaudhuri, Arup Kumar Ghosh, Arindam Kar, Swastik |
| Copyright Year | 2002 |
| Abstract | In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor. |
| Starting Page | 343 |
| Ending Page | 359 |
| Page Count | 17 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s12043-002-0019-8 |
| Alternate Webpage(s) | http://eprints.iisc.ernet.in/7439/1/Flicker_noise_in_degenerately_doped.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s12043-002-0019-8 |
| Volume Number | 58 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
