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Phonon drag thermoelectric power of Sb at low temperature
| Content Provider | Semantic Scholar |
|---|---|
| Author | Saif, J. S. |
| Copyright Year | 1990 |
| Abstract | The phonon drag thermoelectric power of Sb in the temperature range of 0.4–5 K is studied. An approximate expression for the charge carriers-phonon scattering relaxation has been used. The study shows that the interacting phonons should have a certain wave vector. It is found that the electron contribution is higher than the contribution of holes. The study shows that only one characteristic temperature gives good agreement with the experimental value. |
| Starting Page | 217 |
| Ending Page | 222 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/BF03054266 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/BF03054266 |
| Alternate Webpage(s) | https://doi.org/10.1007/BF03054266 |
| Volume Number | 67 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
