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Al doped graphene : A promising material for hydrogen storage at room temperature
| Content Provider | Semantic Scholar |
|---|---|
| Author | Jiang, Qiaorong Zhang, Ren Qin Tan, Thiam Teck |
| Copyright Year | 2009 |
| Abstract | A promising material for hydrogen storage at room temperature–Al doped graphene is proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt % is predicted at T=300 K and P=0.1 GPa with an adsorption energy Eb =−0.260 eV /H2. This is close to the target specified by U.S. Department of Energy with a storage capacity of 6 wt % and a binding energy of 0.2 to −0.4 eV /H2 at ambient temperature and modest pressure for commercial applications. It is believed that the doped Al alters the electronic structures of both C and H2. The bands of H2 overlapping with those of Al and C simultaneously are the underlying mechanism of hydrogen storage capacity enhancement. © 2009 American Institute of Physics. DOI: 10.1063/1.3103327 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://renqinzhang.weebly.com/uploads/9/6/1/9/9619514/jap09ao.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Bands Density functional theory Digital Object Identifier Doping (semiconductor) Electronic structure Functional theories of grammar Graphene H2 Database Engine Hydrogen Name binding RLN2 gene |
| Content Type | Text |
| Resource Type | Article |
