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Wybrane aspekty wytwarzania masek fotolitograficznych na podłożach szafirowych
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zawadzka, Agnieszka |
| Copyright Year | 2019 |
| Abstract | Photolithography is one of the main methods applied in the microand nano-electronics industry. Photolithographic masks are indispensable part of the photolithography process, that enable copying the pattern from the mask into a substrate covered with a resist layer. The paper describes the method of photolithographic masks fabrication process development, with electron beam lithography, on sapphire substrates for UV and DUV lithography applications. The transmission of used materials was examined. The influence of parameters of the electron beam exposure process on the shape and correctness of the mask patterns in the resist layer was presented. The etching procedure of the chromium layer in various solutions such as solutions of hydrochloric acid, cerium ammonium nitrate or potassium permanganate was carried out. The shape of the obtained structures and profiles was examined for different solutions. Based on the developed technology, the lithographic masks for HEMT transistors were fabricated and applied for the photolithography. The shape and overall quality of obtained structures was determined. (Selected aspects of photolithographic masks fabrication on sapphire substrates). Słowa kluczowe: maski fotolitograficzne, fotolitografia, elektronolitografia, podłoża szafirowe, trawienie Cr. |
| Starting Page | 164 |
| Ending Page | 167 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.15199/48.2019.10.37 |
| Volume Number | 1 |
| Alternate Webpage(s) | http://www.pe.org.pl/articles/2019/10/37.pdf |
| Alternate Webpage(s) | https://doi.org/10.15199/48.2019.10.37 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
