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Hydrogenated Amorphous Silicon Emitter and Back-Surface-Field Contacts for Crystalline Silicon Solar Cells
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, T. H. Iwaniczko, Eugene Page, Matthew R. Levi, Dean Branz, Howard M. Yelundur, Vijay Rohatgi, Ajeet Wang, Qi |
| Copyright Year | 2005 |
| Abstract | Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated as emitters and back-surface-field (BSF) contacts to make silicon heterojunction solar cells on p-type crystalline silicon wafers. A common requirement for excellent emitter and BSF quality is minimization of interface recombination. Best results require immediate a Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain record 16.9% and 14.8% efficiencies on p-type planar float-zone (FZ) and Czochralski (CZ) silicon substrates, respectively, with HWCVD a-Si:H(n) emitters and Al-BSF contacts. Initial efforts with p-type HWCVD Si thin films as the BSF have yielded 12.5% efficiency on p type CZ-Si. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.nrel.gov/docs/fy05osti/37033.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
